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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type MJE15029 High transition frequency DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Designed for use as high-frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE15028 Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PD PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25ae Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 50 150 -65~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 8 16 2 2 W UNIT V V V A A A THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 2.5 62.5 UNIT ae ae /W /W Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN MJE15028 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA IB=0 120 V VCEsat VBE Collector-emitter saturation voltage IC=1A IB=0.1A IC=1A ; VCE=2V 0.5 V Base-emitter on voltage 1.0 V ICBO Collector cut-off current VCB=120V; IE=0 10 |I A ICEO Collector cut-off current VCE=120V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 |I A hFE-1 DC current gain IC=0.1A ; VCE=2V 40 hFE-2 hFE-3 DC current gain IC=2A ; VCE=2V IC=3A ; VCE=2V 40 DC current gain 40 hFE-4 DC current gain IC=4A ; VCE=2V 20 fT Transition frequency IC=0.5A;VCE=10V;f=10MHz 30 MHz 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE MJE15028 Fig.2 Outline dimensions (unindicated tolerance: A 0.10mm) 3 Product Specification www.jmnic.com Silicon NPN Power Transistors MJE15028 4 |
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